2SA1943-R(Q) Toshiba, 2SA1943-R(Q) Datasheet - Page 3
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2SA1943-R(Q)
Manufacturer Part Number
2SA1943-R(Q)
Description
Bipolar Power Transistor PNP 230V 15A
Manufacturer
Toshiba
Datasheet
1.2SA1943-OQ.pdf
(5 pages)
Specifications of 2SA1943-R(Q)
Continuous Collector Current
- 15 A
Dc Collector/base Gain Hfe Min
35
Gain Bandwidth Product Ft
30 MHz
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
- 230 V
Emitter- Base Voltage Vebo
- 5 V
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
−0.001
−0.3
−0.1
−20
−16
−12
−8
−4
−3
−1
−0.01
0
0
Common emitter
Tc = 25°C
Collector-emitter voltage V
−2
−0.1
Collector current I
Tc = 100°C
V
−4
CE (sat)
I
C
– V
−1
I B = −10 mA
CE
−800
– I
−6
25
C
C
−250
−600
Common emitter
I C /I B = 10
−400
−25
−150
CE
(A)
−10
−200
−8
−100
(V)
−50
−40
−30
−20
−100
−10
3
−0.05
−0.03
−0.5
−0.3
−0.1
−20
−16
−12
300
100
−50
−30
−10
−8
−4
−5
−3
−1
30
10
−0.01
0
3
−2
0
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I C max (pulsed)*
I C max (continuous)
Common emitter
V CE = −5 V
Common emitter
V CE = −5 V
Tc = 25°C
Tc = 100°C
Collector-emitter voltage V
Tc = 100°C
−0.4
Base-emitter voltage V
−10
−0.1
DC operation
Tc = 25°C
Collector current I
Safe Operating Area
−25
25
−30
−0.8
I
h
C
FE
−25
– V
−1
– I
−100
1 ms*
BE
−1.2
C
25
C
BE
−300
(A)
CE
−10
V CEO max
10 ms*
100 ms*
(V)
−1.6
(V)
−1000
2006-11-09
2SA1943
−100
−2.0