BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet
BUK9520-100B,127
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BUK9520-100B,127 Summary of contents
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... BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... TO-220AB; TO-220AB SC-46; SFM3 BUK9520-100B_1 Product data sheet N-channel TrenchMOS logic level FET Simplified outline SOT78A (3-lead TO-220AB; SC-46; SFM3) Rev. 01 — 6 May 2009 BUK9520-100B Graphic symbol mbb076 Version SOT78A © NXP B.V. 2009. All rights reserved ...
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... °C; unclamped j(init) 03aa24 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET Min Max - 100 - 100 -15 15 Figure Figure 3 - 253 - 203 -55 175 -55 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9520-100B_1 Product data sheet / Conditions see Figure 4 vertical in still air; SOT78 package - Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET 003aac769 = 10 μ 100 μs 1ms 10 ms 100 (V) DS ...
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... °C j from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1.58 2 0.5 ...
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... Output characteristics: drain current as a function of drain-source voltage; typical values 003a a c772 160 gfs (S ) 120 (V) GS Fig 8. Forward transconductance as a function of drain current; typical values. Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET Min Typ Max - 0.86 1 272 - 003a a c771 ...
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... V ( -60 120 150 I (A) D Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET 03aa33 max typ min 0 60 120 180 ( ° 03aa29 0 60 120 180 ( ° © ...
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... Fig 14. Gate charge waveform definitions 1 ( 003a a c777 (pF 80V (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003a a c775 ...
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... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9520-100B_1 20090506 BUK9520-100B_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 6 May 2009 BUK9520-100B Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 6 May 2009 BUK9520-100B N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9520-100B_1 All rights reserved. Date of release: 6 May 2009 ...