FDN8601 Fairchild Semiconductor, FDN8601 Datasheet
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Manufacturer Part Number
FDN8601
Description
MOSFET N-CH 100V 2.7A 3SSOT
Manufacturer
Fairchild Semiconductor
Specifications of FDN8601
Input Capacitance (ciss) @ Vds
210pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
109 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
SOT-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
85.4 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.7 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Fall Time
3.4 ns
Gate Charge Qg
3 nC
Rise Time
1.3 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
FAIRCHILD/仙童
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
FDN8601
N-Channel PowerTrench
100 V, 2.7 A, 109 m:
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
Fast switching speed
100% UIL tested
RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
TJC
TJA
surface mount package
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
8601
= 109 m: at V
= 175 m: at V
Drain to Source Voltage
Gate to Source Voltage
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10 V, I
= 6 V, I
-Pulsed
-Continuous
FDN8601
Device
D
D
= 1.2 A
= 1.5 A
T
®
A
= 25 °C unless otherwise noted
MOSFET
Parameter
DS(on)
Package
SSOT-3
1
General Description
This
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.
Applications
Primary DC-DC Switch
Load Switch
N-Channel
Reel Size
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
(Note 1)
MOSFET
DS(on)
Tape Width
, switching performance and
is
8 mm
-55 to +150
Ratings
produced using Fairchild
100
±20
2.7
1.5
0.6
12
13
75
80
®
process that has
www.fairchildsemi.com
3000 units
Quantity
July 2010
Units
°C/W
mJ
°C
W
V
V
A
Related parts for FDN8601
FDN8601 Summary of contents
... R Thermal Resistance, Junction to Case TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device 8601 FDN8601 ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C ® MOSFET General Description This N-Channel = 1 Semiconductor‘s advanced Power Trench = 1 been optimized for r ruggedness. ...
... TJA R is guaranteed by design while R is determined by the user's board design. TJC TCA 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ° 3. Starting N-ch mH ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 ° ...
... JUNCTION TEMPERATURE ( Figure 3. Normalized On- Resistance vs Junction Temperature 12 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted 100 125 150 - ...
... Gate Charge Characteristics 125 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 300 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J 300 100 100 C J 0.01 0.001 PULSE WIDTH (sec MHz ...
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J SINGLE PULSE 180 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK T ...
... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...
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