XC7SH32GV,125 NXP Semiconductors, XC7SH32GV,125 Datasheet - Page 5

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XC7SH32GV,125

Manufacturer Part Number
XC7SH32GV,125
Description
IC GATE OR 2INPUT SO5
Manufacturer
NXP Semiconductors
Datasheet

Specifications of XC7SH32GV,125

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5197-2
NXP Semiconductors
11. Dynamic characteristics
Table 8.
GND = 0 V. For waveform see
[1]
[2]
[3]
[4]
XC7SH32_1
Product data sheet
Symbol Parameter
t
C
pd
PD
t
Typical values are measured at V
Typical values are measured at V
C
P
f
f
C
V
pd
i
o
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
is the same as t
= output load capacitance in pF;
= C
is used to determine the dynamic power dissipation P
= supply voltage in Volts.
propagation
delay
power
dissipation
capacitance
PD
Dynamic characteristics
V
CC
2
PLH
f
i
+ (C
Conditions
A and B to Y
per buffer;
C
V
and t
I
L
V
V
= GND to V
= 50 pF; f = 1 MHz;
L
CC
CC
C
C
C
C
PHL
Figure
L
L
L
L
V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 15 pF
= 50 pF
= 15 pF
= 50 pF
.
CC
CC
CC
2
= 3.3 V.
= 5.0 V.
5. For test circuit see
f
o
CC
) where:
Rev. 01 — 2 September 2009
[1]
[2]
[3]
[4]
D
( W).
Min
Figure
-
-
-
-
-
25 C
Typ
4.4
6.3
3.2
4.6
16
6.
Max
11.4
7.9
5.5
7.5
-
40 C to +85 C
Min
1.0
1.0
1.0
1.0
-
Max
13.0
9.5
6.5
8.5
-
40 C to +125 C Unit
Min
1.0
1.0
1.0
1.0
-
XC7SH32
© NXP B.V. 2009. All rights reserved.
2-input OR gate
Max
10.0
14.5
7.0
9.5
-
5 of 11
ns
ns
ns
ns
pF

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