CAT28F020G-90T CATALYST SEMICONDUCTOR, CAT28F020G-90T Datasheet

IC, FLASH, 2MBIT, 90NS, LCC-32

CAT28F020G-90T

Manufacturer Part Number
CAT28F020G-90T
Description
IC, FLASH, 2MBIT, 90NS, LCC-32
Manufacturer
CATALYST SEMICONDUCTOR
Datasheet

Specifications of CAT28F020G-90T

Memory Type
Flash
Memory Size
2Mbit
Memory Configuration
256K X 8
Access Time
90ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
PLCC
No. Of Pins
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT28F020G-90T
Manufacturer:
ON Semiconductor
Quantity:
10 000
2 Megabit CMOS Flash Memory
FEATURES
DESCRIPTION
The CAT28F020 is a high speed 256K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and E
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
BLOCK DIAGRAM
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
Fast read access time: 90/120 ns
Low power CMOS dissipation:
– Active: 30 mA max (CMOS/TTL levels)
– Standby: 1 mA max (TTL levels)
– Standby: 100 A max (CMOS levels)
High speed programming:
– 10 s per byte
– 4 seconds typical chip program
0.5 seconds typical chip-erase
12.0V
A 0 –A 17
5% programming and erase voltage
WE
OE
CE
2
PROM devices.
VOLTAGE VERIFY
SWITCH
COMMAND
REGISTER
Programming and
PROGRAM VOLTAGE
ERASE VOLTAGE
SWITCH
SWITCH
Y-DECODER
X-DECODER
1
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F020 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
Commercial, industrial and automotive
temperature ranges
Stop timer for program/erase
On-chip address and data latches
JEDEC standard pinouts:
– 32-pin DIP
– 32-pin PLCC
– 32-pin TSOP (8 x 20)
100,000 program/erase cycles
10 year data retention
Electronic signature
CE, OE LOGIC
second source
Licensed Intel
LATCH
DATA
I/O BUFFERS
2,097,152 BIT
I/O 0 –I/O 7
Y-GATING
MEMORY
ARRAY
SENSE
AMP
CAT28F020
Doc. No. MD-1029, Rev. F
5115 FHD F02

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CAT28F020G-90T Summary of contents

Page 1

Megabit CMOS Flash Memory FEATURES Fast read access time: 90/120 ns Low power CMOS dissipation: – Active max (CMOS/TTL levels) – Standby max (TTL levels) – Standby: 100 A max (CMOS levels) High speed programming: ...

Page 2

CAT28F020 PIN CONFIGURATION DIP Package ( ...

Page 3

ABSOLUTE MAXIMUM RATINGS* Temperature Under Bias ................. – +130 C Storage Temperature ....................... – +150 C Voltage on Any Pin with (1) Respect to Ground ........... –2. Voltage on Pin A with 9 (1) ...

Page 4

CAT28F020 D.C. OPERATING CHARACTERISTICS V = +5V 10%, unless otherwise specified. (See Note 2) CC Symbol Parameter I Input Leakage Current LI I Output Leakage Current Standby Current CMOS SB1 Standby Current TTL SB2 ...

Page 5

SUPPLY CHARACTERISTICS ...

Page 6

CAT28F020 A.C. CHARACTERISTICS, Program/Erase Operation V = +5V 10%, unless otherwise specified. (See Note 6) CC JEDEC Standard Symbol Symbol Parameter t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time ...

Page 7

FUNCTION TABLE Mode CE Read V IL Output Disable V IL Standby V IH Signature (MFG Signature (Device Program/Erase V IL Write Cycle V IL Read Cycle V IL WRITE COMMAND TABLE Commands are written ...

Page 8

CAT28F020 READ OPERATIONS Read Mode A Read operation is performed with both CE and OE low and with WE high. V can be either high or low, PP however high, the Set READ command has to PP ...

Page 9

WRITE OPERATIONS The following operations are initiated by observing the sequence specified in the Write Command Table. Read Mode The device can be put into a standard READ mode by initiating a write cycle with 00H on the data bus. ...

Page 10

CAT28F020 (1) Figure 5. Chip Erase Algorithm START ERASURE APPLY V PPH PROGRAM ALL BYTES TO 00H INITIALIZE ADDRESS INITIALIZE PLSCNT = 0 WRITE ERASE SETUP COMMAND WRITE ERASE COMMAND TIME OUT 10ms WRITE ERASE VERIFY COMMAND TIME OUT 6 ...

Page 11

Erase-Verify Mode The Erase-verify operation is performed on every byte after each erase pulse to verify that the bits have been erased. Programming Mode The programming operation is initiated using the pro- gramming algorithm of Figure 7. During the first ...

Page 12

CAT28F020 Figure 7. Programming Algorithm START PROGRAMMING APPLY V PPH INITIALIZE ADDRESS PLSCNT = 0 WRITE SETUP PROG. COMMAND WRITE PROG. CMD ADDR AND DATA TIME OUT 10 s WRITE PROGRAM VERIFY COMMAND TIME OUT 6 s READ DATA FROM ...

Page 13

Abort/Reset An Abort/Reset command is available to allow the user to safely abort an erase or program sequence. Two consecutive program cycles with FFH on the data bus will abort an erase or a program operation. The abort/ reset operation ...

Page 14

CAT28F020 ALTERNATE CE CE CE-CONTROLLED WRITES CE CE JEDEC Standard Symbol Symbol Parameter t t Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

Page 15

EXAMPLE OF ORDERING INFORMATION Prefix Device # CAT 28F020 Product Number Optional Package Company ID N: PLCC T: TSOP (8mmx20mm) TR: TSOP (Reverse Pinout) G: PLCC (Lead free, Halogen free) L: PDIP (Lead free, Halogen free) H: TSOP (Lead free, ...

Page 16

CAT28F020 REVISION HISTORY Date Revision Description 1-May-02 A Initial issue 10-Feb-04 B Change V 01-Jul-04 C Added Green Packages in all areas. 15-Oct-08 D Eliminate PDIP SnPb package. 17-Nov-08 E Change logo and fine print to ON Semiconductor 31-Jul-09 F ...

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