LM50BIM3X National Semiconductor, LM50BIM3X Datasheet - Page 2

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LM50BIM3X

Manufacturer Part Number
LM50BIM3X
Description
IC,TEMPERATURE SENSOR,BIPOLAR,TO-236,3PIN,PLASTIC
Manufacturer
National Semiconductor
Datasheets

Specifications of LM50BIM3X

Rohs Compliant
NO

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Accuracy
(Note 6)
Nonlinearity (Note 7)
Sensor Gain
(Average Slope)
Output Resistance
Line Regulation
(Note 8)
Quiescent Current
(Note 9)
Change of Quiescent
Current (Note 9)
Temperature Coefficient of
Quiescent Current
Long Term Stability (Note 10)
Unless otherwise noted, these specifications apply for V
limits apply for the specified T
Electrical Characteristics
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond its rated operating conditions.
Note 2: See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” or the section titled “Surface Mount” found in a current National Semicon-
ductor Linear Data Book for other methods of soldering surface mount devices.
Note 3: Human body model, 100 pF discharged through a 1.5 k
Note 4: Thermal resistance of the SOT-23 package is specified without a heat sink, junction to ambient.
Note 5: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 6: Accuracy is defined as the error between the output voltage and 10mv/˚C times the device’s case temperature plus 500 mV, at specified conditions of volt-
age, current, and temperature (expressed in ˚C).
Note 7: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device’s rated temperature
range.
Note 8: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be com-
puted by multiplying the internal dissipation by the thermal resistance.
Note 9: Quiescent current is defined in the circuit of Figure 1 .
Note 10: For best long-term stability, any precision circuit will give best results if the unit is aged at a warm temperature, and/or temperature cycled for at least 46
hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave-soldered; allow time for stress relaxation to occur. The ma-
jority of the drift will occur in the first 1000 hours at elevated temperatures. The drift after 1000 hours will not continue at the first 1000 hour rate.
Absolute Maximum Ratings
Supply Voltage
Output Voltage
Output Current
Storage Temperature
Lead Temperature:
T
JMAX
SOT Package (Note 2):
Junction Temperature
Vapor Phase (60 seconds)
Infrared (15 seconds)
, Maximum
Parameter
A
= T
T
T
T
+4.5V
+4.5V
+4.5V
T
A
A
A
J
1000 hours
J
= 125˚C, for
= +25˚C
= T
= T
(+V
= T
Conditions
MAX
MIN
S
MIN
V
V
V
−65˚C to +150˚C
+ 0.6V) to −1.0V
S
S
S
+12V to −0.2V
to T
(Note 1)
+10V
+10V
+10V
MAX
resistor. Machine model, 200 pF discharged directly into each pin.
10 mA
215˚C
220˚C
150˚C
; all other limits T
S
= +5 V
Typical
±
2000
+1.0
0.08
2
DC
ESD Susceptibility (Note 3):
Operating Ratings
Specified Temperature Range:
Operating Temperature Range
Supply Voltage Range (+V
and I
LM50B
JA
Human Body Model
Machine Model
LM50C
LM50B
(Note 4)
A
LOAD
+3.0, −3.5
(Note 5)
= T
+10.3
Limit
4000
±
±
±
+9.7
±
±
130
180
2.0
2.0
3.0
0.8
0.8
1.2
J
= +0.5 µA, in the circuit of Figure 1 . Boldface
= +25˚C, unless otherwise noted.
Typical
±
2000
+2.0
0.08
S
)
LM50C
(Note 1)
(Note 5)
+10.3
Limit
4000
±
±
±
±
+9.7
±
±
130
180
2.0
3.0
4.0
4.0
0.8
0.8
1.2
−40˚C to +125˚C
−25˚C to +100˚C
−40˚C to +150˚C
+4.5V to +10V
T
mV/˚C (max)
mV/˚C (min)
mV/V (max)
mV/V (max)
MIN
µA (max)
µA (max)
µA (max)
˚C (max)
˚C (max)
˚C (max)
˚C (max)
(Limit)
µA/˚C
450˚C/W
Units
to T
(max)
˚C
2000V
250V
MAX

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