PIC18F4420-E/PT Microchip Technology, PIC18F4420-E/PT Datasheet - Page 85
![44 PIN, 16 KB ENH FLASH, 3804 RAM, 36 I/O, PB FREE,](/photos/6/82/68251/c04-076_pt_sml.jpg)
PIC18F4420-E/PT
Manufacturer Part Number
PIC18F4420-E/PT
Description
44 PIN, 16 KB ENH FLASH, 3804 RAM, 36 I/O, PB FREE,
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC18F2221-ISO.pdf
(46 pages)
2.PIC18F2420-IML.pdf
(412 pages)
3.PIC18F2420-IML.pdf
(16 pages)
4.PIC18F2420-IML.pdf
(8 pages)
5.PIC18F2420-IML.pdf
(6 pages)
6.PIC18F2420-IML.pdf
(8 pages)
7.PIC18F2420-IML.pdf
(4 pages)
Specifications of PIC18F4420-E/PT
Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
44-TQFP, 44-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F4420-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC18F2221-ISO PDF datasheet
- PIC18F2420-IML PDF datasheet #2
- PIC18F2420-IML PDF datasheet #3
- PIC18F2420-IML PDF datasheet #4
- PIC18F2420-IML PDF datasheet #5
- PIC18F2420-IML PDF datasheet #6
- PIC18F2420-IML PDF datasheet #7
- Current page: 85 of 412
- Download datasheet (7Mb)
7.0
The data EEPROM is a nonvolatile memory array,
separate from the data RAM and program memory, that
is used for long-term storage of program data. It is not
directly mapped in either the register file or program
memory space but is indirectly addressed through the
Special Function Registers (SFRs). The EEPROM is
readable and writable during normal operation over the
entire V
Five SFRs are used to read and write to the data
EEPROM as well as the program memory. They are:
• EECON1
• EECON2
• EEDATA
• EEADR
The data EEPROM allows byte read and write. When
interfacing to the data memory block, EEDATA holds
the 8-bit data for read/write and the EEADR register
holds the address of the EEPROM location being
accessed.
The EEPROM data memory is rated for high erase/write
cycle endurance. A byte write automatically erases the
location and writes the new data (erase-before-write).
The write time is controlled by an on-chip timer; it will
vary with voltage and temperature as well as from chip
to chip. Please refer to parameter D122 (Table 26-1 in
Section 26.0 “Electrical Characteristics”) for exact
limits.
7.1
The EEADR register is used to address the data
EEPROM for read and write operations. The 8-bit
range of the register can address a memory range of
256 bytes (00h to FFh).
7.2
Access to the data EEPROM is controlled by two
registers: EECON1 and EECON2. These are the same
registers which control access to the program memory
and are used in a similar manner for the data
EEPROM.
© 2008 Microchip Technology Inc.
DD
DATA EEPROM MEMORY
EECON1 and EECON2 Registers
EEADR Register
range.
PIC18F2420/2520/4420/4520
The EECON1 register (Register 7-1) is the control
register for data and program memory access. Control
bit EEPGD determines if the access will be to program
or data EEPROM memory. When clear, operations will
access the data EEPROM memory. When set, program
memory is accessed.
Control bit, CFGS, determines if the access will be to
the Configuration registers or to program memory/data
EEPROM memory. When set, subsequent operations
access Configuration registers. When CFGS is clear,
the EEPGD bit selects either program Flash or data
EEPROM memory.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set in hardware when the WR bit is set and cleared
when the internal programming timer expires and the
write operation is complete.
The WR control bit initiates write operations. The bit
can be set but not cleared in software. It is only cleared
in hardware at the completion of the write operation.
Control bits, RD and WR, start read and erase/write
operations, respectively. These bits are set by firmware
and cleared by hardware at the completion of the
operation.
The RD bit cannot be set when accessing program
memory (EEPGD = 1). Program memory is read using
table read instructions. See Section 6.1 “Table Reads
and Table Writes” regarding table reads.
The EECON2 register is not a physical register. It is
used exclusively in the memory write and erase
sequences. Reading EECON2 will read all ‘0’s.
Note:
Note:
During normal operation, the WRERR
may read as ‘1’. This can indicate that a
write operation was prematurely termi-
nated by a Reset, or a write operation was
attempted improperly.
The EEIF interrupt flag bit (PIR2<4>) is set
when the write is complete. It must be
cleared in software.
DS39631E-page 83
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