IP4853CX24/P,135 NXP Semiconductors, IP4853CX24/P,135 Datasheet - Page 7

• Manufacturer Part Number: IP4853CX24/P,135
• Description: IC LEVEL SHIFTER MEM WLCSP
• Manufacturer: NXP Semiconductors

Specifications of IP4853CX24/P,135

• Applications: Cell Phones, Digital Cameras, Media Players
• Interface: microSD™, MMC, SD
• Voltage - Supply: 1.62 V ~ 2.1 V
• Package / Case: 24-UFBGA, WLCSP
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5535-2

NXP Semiconductors
8. Static characteristics
Table 7.
At recommended operating conditions; T
unless otherwise specified.
[1]
[2]
IP4853CX24
Product data sheet
Symbol
Voltage regulator output: pin VSD
V
ΔV
I
I
I
C
Control and data inputs
Host side: pins ENABLE, DIR_0, DIR_1_3, DIR_CMD, CLK_IN and DATA0_H to DATA3_H
V
V
C
Memory card side: pins CMD_SD and DATA0_SD to DATA3_SD
V
V
C
Control and data outputs
Host side: pins CLK_FB, CMD_H and DATA0_H to DATA3_H
V
V
Memory card side: pins CLK_SD, CMD_SD and DATA0_SD to DATA3_SD, CD and WP
V
V
I
R
R
R
O(reg)
O(sc)
q(reg)
LRzd
O(reg)
IH
IL
IH
IL
OH
OL
OH
OL
ext
ch
ch
s
pd
pu
do(reg)
Typical values are measured at T
EMI filter line capacitance per data channel from I/O pin to driver; C
Static characteristics
Parameter
regulator output voltage
regulator dropout
voltage variation
regulator output current
short-circuit
output current
regulator quiescent
current
external capacitance
HIGH-level input voltage
LOW-level input voltage
channel capacitance
HIGH-level input voltage
LOW-level input voltage
channel capacitance
HIGH-level output voltage I
LOW-level output voltage I
HIGH-level output voltage I
LOW-level output voltage I
Zener diode reverse
leakage current
series resistance
pull-down resistance
pull-up resistance
amb
= 25 °C.
amb
Conditions
C
I
pin ENABLE = HIGH (active mode)
pin ENABLE = LOW
(not active mode)
recommended capacitor at pin VSD
V
V
V
R1 to R6; tolerance ±20 %
R7; tolerance ±30 %
R10; tolerance ±30 %
R11 to R13; tolerance ±30 %
R14 and R15; tolerance ±30 %
All information provided in this document is subject to legal disclaimers.
O(reg)
O
O
O
O
I
I
I
L
I
I
= −3 mA; V
= 3 mA; V
= −6 mA; V
= 6 mA; V
=
= 0 V; f
= 0 V; f
= 3 V
O(reg)
O(reg)
= 1 μF
−
30
= 200 mA
Rev. 3 — 30 September 2010
= 0 A
= 200 mA; V
°
i
C to +85
i
= 1 MHz
= 1 MHz
SD, MMC and microSD memory card integrated level shifter
I
I
= V
= V
I
I
= V
= V
IL
IL
IH
IH
°
C; voltages are referenced to GND (ground = 0 V);
BAT
ch
is guaranteed by design.
≥ 2.9 V
[2]
[2]
Min
-
2.75
-
-
-
-
-
-
0.65 × V
-
-
0.65 × V
-
-
V
-
V
-
-
32
329
10.5
49
70
CC
O(reg)
− 0.45
− 0.45 -
CC
O(reg)
IP4853CX24
Typ
2.9
-
-
200
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
40
470
15
70
100
[1]
© NXP B.V. 2010. All rights reserved.
Max
2.987
-
150
-
500
200
2
-
-
0.3
20
-
0.3
20
-
0.45
-
0.45
100
48
611
19.5
91
130
V
mA
V
V
V
V
V
kΩ
kΩ
kΩ
kΩ
Unit
V
mV
mA
μA
μA
μF
V
pF
V
pF
V
nA
Ω
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