1MBI400S-120 FUJI ELECTRIC, 1MBI400S-120 Datasheet - Page 3

• Manufacturer Part Number: 1MBI400S-120
• Description: IGBT MODULE, 1200V, 400A
• Manufacturer: FUJI ELECTRIC

Specifications of 1MBI400S-120

• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 3.1kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 3.1kW
• Rohs Compliant: Yes

1MBI400S-120
1000
5000
1000
500
100
500
100
300
200
100
50
50
0
0.5
0.5
0
ton
tr
100
toff
tf
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C
1
1
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125°C
Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Switching loss vs. Gate resistance (typ.)
200
Gate resistance : Rg [ ohm ]
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
300
400
10
10
500
Eon
600
toff
Err
Eoff
tr
ton
tf
700
50
50
1000
500
100
100
900
800
700
600
500
400
300
200
100
50
80
60
40
20
0
0
0
0
0
+VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125°C
toff
ton
tr
tf
100
200
Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125°C
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Collector - Emitter voltage : VCE [ V ]
Reverse bias safe operating area
200
Vcc=600V, VGE=+-15V, Rg=1.8ohm
200
400
Collector current : Ic [ A ]
Collector current : Ic [ A ]
300
600
400
400
800
1000
500
IGBT Module
600
Eoff(25°C)
Err(125°C)
Err(25°C)
Eon(125°C)
Eon(25°C)
Eoff(125°C)
1200
600
1400
700
800