2MBI400U2B-060-50 FUJI ELECTRIC, 2MBI400U2B-060-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI400U2B-060-50
• Description: DUAL IGBT MODULE 400A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI400U2B-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 2.55V
• Power Dissipation Max: 1.25kW
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100.0
800
600
400
200
800
600
400
200
10.0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
10
VGE=15V / chip
VGE=20V15V 12V
Tj= 25℃ / chip
2
Coes
2
Tj=25℃
3
Cres
20
Cies
3
4
Tj=125℃
10V
8V
30
5
4
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
1000
10.0
Collector current vs. Collector-Emitter voltage (typ.)
800
600
400
200
8.0
6.0
4.0
2.0
0.0
0
0
5
0
MS5F6562
Vcc=300V， Ic=400A，Tj= 25℃
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
400
1
10
Tj= 125℃ / chip
Gate charge : Qg [ nC ]
Tj=25ﾟC / chip
VGE
VCE
2
800
VGE=20V15V
15
3
1200
20
12V
Ic=800A
Ic=400A
Ic=200A
10
H04-004-03a
4
10V
8V
14
1600
25
5
a