SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 5
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SI4562DY-T1-E3
Manufacturer Part Number
SI4562DY-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, SOIC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4562DY-T1-E3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
7.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
7.1 A, - 6.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4562DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70717
S09-0867-Rev. C, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
32
24
16
5
4
3
2
1
0
8
0
0
0
0
V
GS
V
I
D
On-Resistance vs. Drain Current
DS
= 6.2 A
= 2.5 V
8
= 10 V
5
1
V
Output Characteristics
DS
Q
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
Gate Charge
D
- Drain Current (A)
16
10
2
V
GS
= 5 V, 4.5 V, 4 V, 3.5 V
24
15
V
3
GS
= 4.5 V
32
20
4
2.5 V
1.5 V
3 V
2 V
40
25
5
4500
3600
2700
1800
900
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
- 50
8
0
0
0
0
- 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 6.2 A
= 4.5 V
4
V
V
Transfer Characteristics
T
DS
0
GS
J
1
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
Capacitance
25
oss
8
T
C
50
Vishay Siliconix
C
iss
2
= - 55 °C
12
75
Si4562DY
www.vishay.com
C
100
rss
3
16
125 °C
125
25 °C
150
20
4
5