SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 6
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SI4562DY-T1-E3
Manufacturer Part Number
SI4562DY-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, SOIC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4562DY-T1-E3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
7.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
7.1 A, - 6.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4562DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4562DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70717.
www.vishay.com
6
- 0.3
40
10
0.6
0.3
0.0
1
- 50
0.01
0
0.1
2
1
10
Source-Drain Diode Forward Voltage
0.2
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
T
V
J
SD
0.4
0
= 150 °C
I
Threshold Voltage
- Source-to-Drain Voltage (V)
D
T
= 250 µA
J
25
- Temperature (°C)
0.6
10
50
-3
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.0
T
J
= 25 °C
100
1.2
125
1.4
10
-2
Square Wave Pulse Duration (s)
150
1.6
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
6
0
0.01
Single Pulse Power vs. Junction-to-Ambient
0
On-Resistance vs. Gate-to-Source Voltage
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
P
V
1
DM
GS
0.10
JM
− T
- Gate-to-Source Voltage (V)
t
A
1
= P
t
2
2
DM
Time (s)
S09-0867-Rev. C, 18-May-09
Z
thJA
Document Number: 70717
thJA
t
t
1
2
1.00
(t)
= 62.5 °C/W
3
I
10
D
= 6.2 A
4
10.00
30
5