SI4562DY-T1-E3 Vishay, SI4562DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4562DY-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4562DY-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.1 A, - 6.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4562DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70717.
www.vishay.com
6
- 0.3
40
10
0.6
0.3
0.0
1
- 50
0.01
0
0.1
2
1
10
Source-Drain Diode Forward Voltage
0.2
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
T
V
J
SD
0.4
0
= 150 °C
I
Threshold Voltage
- Source-to-Drain Voltage (V)
D
T
= 250 µA
J
25
- Temperature (°C)
0.6
10
50
-3
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.0
T
J
= 25 °C
100
1.2
125
1.4
10
-2
Square Wave Pulse Duration (s)
150
1.6
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
6
0
0.01
Single Pulse Power vs. Junction-to-Ambient
0
On-Resistance vs. Gate-to-Source Voltage
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
P
V
1
DM
GS
0.10
JM
− T
- Gate-to-Source Voltage (V)
t
A
1
= P
t
2
2
DM
Time (s)
S09-0867-Rev. C, 18-May-09
Z
thJA
Document Number: 70717
thJA
t
t
1
2
1.00
(t)
= 62.5 °C/W
3
I
10
D
= 6.2 A
4
10.00
30
5