2N7002BKV NXP Semiconductors, 2N7002BKV Datasheet - Page 5

• Manufacturer Part Number: 2N7002BKV
• Description: MOSFET,NN CH,60V,0.34A,SOT666
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BKV

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Power Dissipation: RoHS Compliant

NXP Semiconductors
2N7002BKV
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
0.75
0.33
0.05
0.02
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
2
−1
−1
Rev. 2 — 22 September 2010
1
1
60 V, 340 mA dual N-channel Trench MOSFET
10
10
10
10
2N7002BKV
2
2
t
t
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
017aaa060
017aaa061
10
10
3
3
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