SIA431DJ-T1-GE3 Vishay, SIA431DJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA431DJ-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 12A
• Manufacturer: Vishay

Specifications of SIA431DJ-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -850mV
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65267
S09-1536-Rev. A, 10-Aug-09
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
5
0
0.0
8
6
4
2
0
0
0
I
D
= 9.6 A
0.5
5
V
DS
10
Output Characteristics
- Drain-to-Source Voltage (V)
Q
1.0
g
I
10
D
- Total Gate Charge (nC)
V
Gate Charge
- DrainCurrent (A)
GS
V
DS
= 1.5 V
1.5
= 10 V
15
20
V
V
DS
GS
2.0
V
20
= 5 V
= 5 V thru 2 V
DS
V
= 16 V
V
30
V
GS
V
V
GS
GS
GS
GS
2.5
= 1.5 V
25
= 1.8 V
= 1 V
= 4.5 V
= 2.5 V
3.0
30
40
3000
2500
2000
1500
1000
10
500
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
8
6
4
2
0
0.0
0
- 50
0
On-Resistance vs. Junction Temperature
C
C
- 25
iss
rss
C
0.3
oss
V
T
DS
J
0
Transfer Characteristics
5
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
V
GS
0.6
Capacitance
25
- Gate-to-Source Voltage (V)
T
10
50
T
C
1.8 V, 6.5 A
Vishay Siliconix
C
= 25 °C
= 125 °C
0.9
T
4.5 V and 2.5 V, 6.5 A
C
75
= - 55 °C
SiA431DJ
100
www.vishay.com
15
1.2
1.5 V, 2 A
125
1.5
150
20
3