PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 8
![N CHANNEL MOSFET, 30V, 100A](/photos/22/20/222048/4627223_sml.jpg)
PSMN1R7-30YL
Manufacturer Part Number
PSMN1R7-30YL
Description
N CHANNEL MOSFET, 30V, 100A
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN1R7-30YL115.pdf
(16 pages)
Specifications of PSMN1R7-30YL
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.29mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN1R7-30YL
Manufacturer:
NXP
Quantity:
51 000
NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 8.
Fig 10. Input and reverse transfer capacitances as a
8000
6000
4000
2000
(pF)
(S)
g
C
200
150
100
fs
50
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
2
0
C
C
iss
rss
20
4
40
6
60
8
All information provided in this document is subject to legal disclaimers.
V
003aac452
003aac455
I
GS
D
(A)
(V)
80
10
Rev. 04 — 20 April 2010
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
3.0
2.5
2.0
1.5
1.0
(A)
80
60
40
20
I
D
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
2
0
4
1
T
j
= 150 °C
PSMN1R7-30YL
6
2
25 °C
3
8
© NXP B.V. 2010. All rights reserved.
V
003aac453
003aac451
V
GS
GS
(V)
(V)
10
4
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