IRF740LC Vishay, IRF740LC Datasheet - Page 6

• Manufacturer Part Number: IRF740LC
• Description: N CHANNEL MOSFET, 400V, 10A, TO-220
• Manufacturer: Vishay

Specifications of IRF740LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF740LC

IRF740LC, SiHF740LC
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
I
GD
G
AS
D.U.T.
0.01 Ω
L
91053_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
This datasheet is subject to change without notice.
800
600
400
200
0
25
+
-
V
V
DD
Starting T
DD
= 50 V
50
A
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
4.5 A
6.3 A
10 A
Same type as D.U.T.
I
Current regulator
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91053
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS