IRFU9120PBF Vishay, IRFU9120PBF Datasheet - Page 3

• Manufacturer Part Number: IRFU9120PBF
• Description: P CHANNEL MOSFET, -100V, 5.6A, IPAK
• Manufacturer: Vishay

Specifications of IRFU9120PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.6A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.6 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU9120PBF

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Document Number: 91280
www.vishay.com
S10-1135-Rev. B, 10-May-10
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