IRFU9120PBF Vishay, IRFU9120PBF Datasheet - Page 6
![P CHANNEL MOSFET, -100V, 5.6A, IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
IRFU9120PBF
Manufacturer Part Number
IRFU9120PBF
Description
P CHANNEL MOSFET, -100V, 5.6A, IPAK
Manufacturer
Vishay
Specifications of IRFU9120PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.6A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.6 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9120PBF
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
g
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-1135-Rev. B, 10-May-10
Document Number: 91280
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD