SI4833ADY-T1-GE3 Vishay, SI4833ADY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4833ADY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 4.6A, SOIC
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4833ADY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.16
0.14
0.12
0.10
0.08
0.06
0.04
10
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
5
0
0.0
0
0
V
GS
V
I
V
= 10 V thru 6 V
D
DS
GS
= 1.7 A
0.6
= 15 V
2
2
= 4.5 V
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
V
D
GS
Gate Charge
- Drain Current (A)
1.2
4
4
= 10 V
1.8
6
6
V
V
V
GS
GS
GS
2.4
8
8
= 5 V
= 4 V
= 3 V
3.0
10
10
700
600
500
400
300
200
100
3.0
2.4
1.8
1.2
0.6
0.0
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
rss
0.8
6
V
V
DS
GS
Transfer Characteristics
T
0
C
J
iss
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
25
Capacitance
1.6
12
I
D
I
D
= 25 °C
S10-2547-Rev. D, 08-Nov-10
= 125 °C
50
Document Number: 73627
2.4
18
75
I
D
100
= - 55 °C
3.2
24
125
4.0
150
30