SI4833ADY-T1-GE3 Vishay, SI4833ADY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4833ADY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 4.6A, SOIC
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
Single Pulse
-4
0.02
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Si4833ADY
Z
thJA
thJA
t
t
1
2
(t)
= 120 °C/W
www.vishay.com
1000
10
7