NTE99 NTE ELECTRONICS, NTE99 Datasheet - Page 2

• Manufacturer Part Number: NTE99
• Description: BIPOLAR TRANSISTOR, NPN, 400V, TO-3
• Manufacturer: NTE ELECTRONICS

Specifications of NTE99

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 400V
• Power Dissipation Pd: 250W
• Dc Collector Current: 50A
• Dc Current Gain Hfe: 25
• Operating Temperature Range: -65°C To +200°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Widtg = 300 s, Duty Cycle
Note 3. The internal Collector–to–Emitter diode can eliminate the need for an external diode to
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristic
Output Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Crossover Time
Resistive Load
Inductive Load, Clamped
clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V
diode is comparable to that of typical fast recovery rectifiers.
Parameter
B
C
= +25 C unless otherwise specified)
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
BE(sat)
h
C
CEV
EBO
t
V
t
t
t
[ 50
t
sv
FE
t
ob
d
s
c
r
f
f
Circuit Outline
I
V
V
I
I
I
I
I
I
V
V
I
t = 25 s, Duty Cycle
t
I
I
C
C
C
C
C
C
F
B1
p
C
B1
CEV
BE
CB
CC
= 25 s, Duty Cycle
= 20A, Note 3
= 100mA, I
= 20A, V
= 40A, V
= 20A, I
= 50A, I
= 20A, I
= 20A(pk), V
= 1A, V
= 1A, V
= 2V, I
= 10V, I
= 250V, I
= 600V, V
Test Conditions
B
B
B
[ 8
C
BE(off)
BE(off)
CE
CE
= 1A
= 10A
= 1A
E
= 0
B
C
= 0, f
= 5V
= 5V
clamp
= 0, V
BE(off)
= 20A,
2%.
= 5V,
= 5V
test
= 250V,
clamp
= 1.5V
= 100kHz
2%
2%
= 400V
E
C
Min
400
25
10
–
–
–
–
–
–
–
–
–
–
–
–
–
0.14
0.36
Typ
2.5
0.3
0.8
0.3
1.0
–
–
–
–
–
–
–
–
–
Max
0.25
2.75
350
750
2.2
5.0
5.0
0.3
1.0
2.5
1.0
2.5
1.0
–
–
–
f
) of this
Unit
mA
mA
pF
V
V
V
V
V
s
s
s
s
s
s