NTE70 NTE ELECTRONICS, NTE70 Datasheet
NTE70
Manufacturer Part Number
NTE70
Description
TRANSISTOR,BJT,NPN,150V V(BR)CEO,50A I(C),TO-210AE
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE70.pdf
(2 pages)
Description:
The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes
a manufacturing technology that provides surface stabilization for high voltage operation and en-
hances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Parameter
EBO
High Voltage Power Amp, Switch
CBO
C
B
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
(BR)CEO
= +25 C unless otherwise specified)
I
CE(sat)
BE(sat)
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
h
EBO
CEX
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
I
I
I
C
C
C
C
EB
CE
CE
CE
J
thJC
= 50mA
= 50A, I
= 20A, I
= 50A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE70
= 6V
= Rated V
= Rated V
= 4V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
B
B
C
= 10A
= 2A
= 10A
= 20A
Test Conditions
CB
CB
, V
, V
2%.
EB
EB
= 1.5V
= 1.5V, T
C
= +150 C
Min Typ Max Unit
150
50
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
–
–
–
–
–
–
–
–
100
1.0
3.0
1.8
3.5
10
–
–
0.7 C/W
250W
180V
150V
mA
20A
20A
V
V
V
V
A
A
6V
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NTE70 Summary of contents
Page 1
... High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and en- hances long term reliability. Absolute Maximum Ratings: Collector–Base Voltage, V CBO Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics Small–Signal Current Gain Collector–Base Capacitance Rise Time Storage Time Fall Time Emitter .760 (19.3) Dia .083 (2.1) Dia .129 (3.3) = +25 C unless otherwise specified) C Symbol Test Conditions ...