BSP295L6327 Infineon Technologies, BSP295L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP295L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP295L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.1V
• Rohs Compliant: Yes

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
pF
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
3
2
1
0
BSP295
DS
= f (T
)
-20
5
D
GS
j
)
= 1.8 A, V
=0, f=1 MHz, T
20
10
98%
typ
Crss
Coss
Ciss
60
15
GS
= 10 V
100
20
j
= 25 °C
°C
V
T
V
j
DS
180
30
Page 6
Rev 1.2
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
A
-1
-2
1
0
-60
1
0
0
BSP295
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
98%
I
typ.
D
1.6
60
= 1 mA
2
100
2006-05-15
2.4
BSP295
°C
T
V
V
j
SD
160
3