SQD50P04-13L-GE3 Vishay, SQD50P04-13L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50P04-13L-GE3
• Description: MOSFET,P CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-13L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65157
S10-1848-Rev. B, 06-Sep-10
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
10
8
6
4
2
0
0
0
0
0
I
D
On-Resistance vs. Drain Current
= 50 A
10
20
3
V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
V
GS
- Total Gate Charge (nC)
20
I
GS
D
Gate Charge
= 10 V thru 5 V
- Drain Current (A)
40
= 4.5 V
6
30
4 V
V
DS
60
9
= 20 V
40
A
= 25 °C, unless otherwise noted)
V
GS
12
80
= 10 V
50
3 V
100
15
60
5000
4000
3000
2000
1000
100
2.0
1.7
1.4
1.1
0.8
0.5
80
60
40
20
0
0
- 50
0
0
C
T
On-Resistance vs. Junction Temperature
rss
C
- 25
V
I
D
GS
= 125 °C
5
= 30 A
C
C
= 10 V
oss
2
iss
25 °C
0
V
V
10
T
DS
GS
Transfer Characteristics
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
- 55 °C
15
Capacitance
4
SQD50P04-13L
50
20
Vishay Siliconix
75
6
25
100
30
www.vishay.com
125
8
35
150
175
10
40
3