B380C1000G-E4/51 Vishay, B380C1000G-E4/51 Datasheet - Page 3
![1A,600V,GPP,SIN PHASE,BRIDGE](/photos/29/2/290276/wog_sml.jpg)
B380C1000G-E4/51
Manufacturer Part Number
B380C1000G-E4/51
Description
1A,600V,GPP,SIN PHASE,BRIDGE
Manufacturer
Vishay
Datasheet
1.B125C1000G-E451.pdf
(4 pages)
Specifications of B380C1000G-E4/51
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
WOG
Product
Single Phase Bridge
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
380 V
Max Surge Current
45 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 125 C
Length
9.86 mm
Width
8.84 mm
Height
5.6 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88500
Revision: 15-Apr-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge
0.01
100
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.4
1
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 50 Hz
Current Per Diode
0.8
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
10 ms Single Half Sine-Wave
J
For technical questions within your region, please contact one of the following:
10
= 125 °C
1.0
1.2
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
100
1.4
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
B40C1000G thru B380C1000G
1.0 (25.4) MIN.
0.01
100
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
10
0.220 (5.6)
0.180 (4.6)
1
1
Figure 6. Typical Junction Capacitance Per Diode
0.060 (1.52)
0.020 (0.51)
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
Reverse Voltage (V)
1
40
T
T
J
J
= 100 °C
= 25 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
3