CM500HA-34A Powerex Inc, CM500HA-34A Datasheet - Page 3

• Manufacturer Part Number: CM500HA-34A
• Description: IGBT MODULE A-SERIES SINGLE DP 1700 500
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM500HA-34A

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 500A
• Current - Collector (ic) (max): 500A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 120nF @ 10V
• Power - Max: 5000W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Distributorinventory: View
• Voltage: 1700V
• Current: 500A
• Circuit Configuration: Single
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500K-01R
• Interface Circuit Ref Design: BG2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM500HA-34A
Single IGBTMOD™ A-Series Module
500 Amperes/1700 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
*4 Case temperature (T C ), and heatsink temperature (T f ) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
02/10 Rev. 1
1000
800
600
400
200
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
T
COLLECTOR-EMITTER VOLTAGE, V
V
j
= 25°C
GE
20V
GATE-EMITTER VOLTAGE, V
OUTPUT CHARACTERISTICS
=
2
4
I
C
COLLECTOR-EMITTER
= 200A
13
15
(TYPICAL)
(TYPICAL)
4
8
8
12
6
12
GE
I
I
C
C
, (VOLTS)
11
10
T
CE
9
= 1000A
= 500A
16
j
8
, (VOLTS)
= 25
o
C
10
20
R th(j-c) Q
R th(j-c) D
R th(c-f) Case to Heatsink,Thermal Grease Applied*
Symbol
R G
10
10
10
10
0
5
4
3
2
1
4
3
2
1
SATURATION VOLTAGE CHARACTERISTICS
0
0
EMITTER-COLLECTOR VOLTAGE, V
V
CE
COLLECTOR-CURRENT, I
FORWARD CHARACTERISTICS
200
= 15V
T
T
j
j
COLLECTOR-EMITTER
= 25°C
= 125°C
1
FREE-WHEEL DIODE
400
(TYPICAL)
(TYPICAL)
2
Test Conditions
Per FWDi*
Per IGBT*
600
C
, (AMPERES)
T
T
3
EC
800
j
j
= 25°C
= 125°C
, (VOLTS)
4
4
1000
4
10
10
10
10
10
200
160
120
4,
80
40
-1
*
0
3
2
1
0
10
5
0
-1
Min.
COLLECTOR-EMITTER VOLTAGE, V
3.0
V
V
—
—
—
GE
GE
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
= 0V
= 10V
T
T
4
j
j
CAPACITANCE VS. V CE
= 25°C
= 125°C
10
0.015
Typ.
—
—
—
0
(TYPICAL)
(TYPICAL)
8
12
0.025
0.042
Max.
10
—
10
GE
1
C
C
C
, (VOLTS)
CE
ies
oes
res
16
, (VOLTS)
°C/W
°C/W
°C/W
Units
10
Ω
20
2
3