SI4599DY-T1-GE3 Vishay, SI4599DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4599DY-T1-GE3
• Description: N- AND P- CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4599DY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 3W, 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A, - 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4599DY-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
I
D
= 5 mA
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
I
T
D
0.4
J
= 250 µA
- Temperature (°C)
25
T
J
= 150 °C
0.6
50
75
0.8
0.01
100
100
0.1
10
T
1
0.1
J
= 25 °C
1.0
Limited by R
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
125
T
A
GS
= 25 °C
New Product
> minimum V
150
V
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which r
DS(on)
10
0.20
0.16
0.12
0.08
0.04
80
64
48
32
16
0
0
0
0
0 .
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
1 ms
1 s
10 s
DC
10 ms
100 ms
V
2
GS
0.01
100
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si4599DY
www.vishay.com
T
T
I
1
A
D
A
= 125 °C
= 5 A
8
= 25 °C
10
1
0
5