BPW96 Vishay, BPW96 Datasheet - Page 2

• Manufacturer Part Number: BPW96
• Description: Photodetector Transistors NPN Phototransistor 70V 150mW 850nm
• Manufacturer: Vishay

Specifications of BPW96

• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 850nm
• Viewing Angle: 40°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Package / Case: Radial, 5mm Dia (T 1 3/4)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BPW96B, BPW96C
Vishay Semiconductors
Note
T
www.vishay.com
420
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8300
200
160
120
80
40
0
0
T
amb
20
- Ambient Temperature (°C)
40
For technical questions, contact: [e-mail]
E
60
V
V
V
e
S
S
S
E
V
= 1 mW/cm
Silicon NPN Phototransistor, RoHS Compliant
e
= 5 V, I
= 5 V, I
= 5 V, I
CE
TEST CONDITION
= 1 mW/cm
TEST CONDITION
R
= 5 V, f = 1 MHz, E = 0
V
80
thJA
CE
V
I
CE
C
C
C
C
I
= 20 V, E = 0
C
= 5 mA, R
= 5 mA, R
= 5 mA, R
= 0.1 mA
= 5 V
= 1 mA
2
, λ = 950 nm,
100
2
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
BPW96C
BPW96B
PART
SYMBOL
V
V
(BR)CEO
C
I
λ
CEO
CEsat
t
t
CEO
λ
ϕ
f
0.1
on
off
c
p
SYMBOL
I
I
ca
ca
MIN.
70
MIN.
2.5
4.5
450 to 1080
TYP.
± 20
850
180
2.0
2.3
1
3
TYP.
4.5
8
Document Number: 81532
MAX.
200
0.3
MAX.
Rev. 1.7, 05-Sep-08
7.5
15
UNIT
kHz
UNIT
deg
nm
nm
nA
pF
µs
µs
mA
mA
V
V