H11A817BSD Fairchild Semiconductor, H11A817BSD Datasheet - Page 3
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H11A817BSD
Manufacturer Part Number
H11A817BSD
Description
Transistor Output Optocouplers Optocoupler SM-DIP4 Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.H11A817B300W.pdf
(11 pages)
Specifications of H11A817BSD
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.2 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
260 %
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-4 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H11A817BSD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Transfer Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to Figure 13.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol DC Characteristic
AC CHARACTERISTIC
V
Symbol
CE (SAT)
CTR
V
R
C
t
t
ISO
r
f
ISO
ISO
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Input-Output Isolation Voltage
(note 3)
Isolation Resistance
Isolation Capacitance
A
= 25°C.
Characteristic
I
I
(I
(I
I
I
I
I
I
I
C
F
F
F
C
C
C
C
C
(T
F
F
/I
= ±1mA, V
= ±1mA, V
= 1mA, V
= 1mA, I
= 2.5mA, I
= 1mA, I
= 2mA, V
= 2mA, V
F
A
= 10mA, V
= 5mA, V
x 100%.
= 25°C Unless otherwise specified.)
Test Conditions
F
F
CE
CE
CE
(I
(V
(V
CE
(f = 60Hz, t = 1 min)
= ±20mA
= 20mA
CE
CE
F
I-O
CE
Test Conditions
I-O
I-O
= 10mA
= 5V
= 2 V, R
= 2 V, R
= 5V
= 5V
= 5V
≤ 2µA)
= 5V
= 500 VDC)
= 0, f = 1 MHz)
(1)
(1)
(1)
(1)
(1)
L
L
3
= 100 Ω
= 100 Ω
(2)
(2)
5x10
Min.
5000
H11AA814A
H11AA814
H11A617A
H11A617B
H11A617C
H11A617D
H11A817A
H11A817B
H11A817C
H11A817D
H11A617A
H11A617B
H11A617C
H11A617D
814 series
617 series
817 series
10
H11A817
Device
ALL
ALL
Typ.*
10
0.6
11
Min Typ* Max Unit
100
160
130
200
300
20
50
40
63
50
80
13
22
34
56
Max.
1.0
4
3
www.fairchildsemi.com
300
150
125
200
320
600
160
260
400
600
0.2
0.4
0.2
80
18
18
Vac(rms)
Units
Ω
pf
µs
µs
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
V