MAX1985EVKIT Maxim Integrated Products, MAX1985EVKIT Datasheet - Page 2

• Manufacturer Part Number: MAX1985EVKIT
• Description: Power Management Modules & Development Tools MAX1985 EVAL KIT MAX1985 EVAL KIT
• Manufacturer: Maxim Integrated Products

Specifications of MAX1985EVKIT

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
OUT, IN, BITA, BITB, BITC, LD1, LD2, LD3, LD4,
LDG to GND........................................................................±0.3V
LX to GND ................................................-0.3V to (V
SETI, REF, MODE, SEL to GND ...................-0.3V to (V
Continuous Power Dissipation (T
Ultra-High-Efficiency White
LED Drivers
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1; V
unless otherwise noted. Typical values are at T
2
IN Supply Range
IN Undervoltage Lockout Threshold
IN Quiescent Current
IN Shutdown Current
REF Output Voltage
REF Line Regulation
REF Load Regulation
Oscillator Frequency
Oscillator Maximum Duty Cycle
OUT Overvoltage Protection (OVP)
Threshold
INTERNAL MOSFET SWITCHES
N-Channel MOSFET On-Resistance
N-Channel MOSFET Leakage Current V
P-Channel MOSFET On-Resistance
P-Channel MOSFET Leakage Current
N-Channel MOSFET Current Limit
CONTROL INPUTS
BITA, BITB, BITC Input Logic Low
Level
BITA, BITB, BITC Input Logic High
Level
MODE Input Logic Low Level
MODE Input Logic High Level
MODE, BITA, BITB, BITC Input Bias
Current
LD5, LD6, LD7, LD8 to GND ................................-0.3V to +6V
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
20-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW
_______________________________________________________________________________________
PARAMETER
IN
= 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, C
A
= +70°C)
50mV typical hysteresis
BITA = BITB = BITC = IN, LD1 to LD8 = GND
BITA = BITB = BITC = GND
I
2.7V < V
-1µA < I
V
hysteresis
I
I
LX = GND, V
MAX1984
MAX1985
MAX1986
2.7V < V
2.7V < V
2.7V < V
2.7V < V
2.7V < V
REF
LX
LX
LD1
LX
= 200mA
= 200mA
A
= 5.5V, BITA = BITB = BITC = GND
= 0
to V
= +25°C.)
REF
IN
IN
IN
IN
IN
IN
LD8
OUT
< 5.5V
< 5.5V
< 5.5V
< 5.5V
< 5.5V
< 5.5V
< +50µA
IN
OUT
= 50mV, OUT rising, 100mV typical
+ 0.3V)
+ 0.3V)
= 5.5V, BITA = BITB = BITC = GND
CONDITIONS
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
OUT
= 4.7µF, C
V
1.230
IN
MIN
0.50
0.40
0.30
2.7
2.2
0.8
5.1
1.6
- 0.4
REF
= 0.22µF, T
1.250
TYP
0.65
0.52
0.39
0.01
400
2.4
0.1
0.2
5.3
0.4
0.1
0.5
0.1
85
5
1
A
1.270
MAX
0.81
0.65
0.52
600
5.5
2.6
1.2
5.5
0.8
0.4
0.4
15
= 0°C to +85°C,
1
5
1
1
1
1
UNITS
MHz
mV
mV
µA
µA
µA
µA
µA
%
Ω
Ω
V
V
V
V
A
V
V
V
V