DF04MA-E3/45 Vishay, DF04MA-E3/45 Datasheet - Page 3
![DIODE GPP 1A 400V 6DIP](/photos/16/3/160389/dfm_sml.jpg)
DF04MA-E3/45
Manufacturer Part Number
DF04MA-E3/45
Description
DIODE GPP 1A 400V 6DIP
Manufacturer
Vishay
Datasheet
1.DF005MA-E345.pdf
(4 pages)
Specifications of DF04MA-E3/45
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-EDIP (0.300", 7.62mm)
Product
Single Phase Bridge
Peak Reverse Voltage
400 V
Maximum Rms Reverse Voltage
280 V
Max Surge Current
30 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88572
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.8
T
40
T
J
J
= 50 °C
0.045 (1.14)
0.035 (0.89)
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
60
0.023 (0.58)
0.018 (0.46)
J
= 25 °C
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
100
1.4
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
Figure 6. Typical Transient Thermal Impedance Per Diode
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
1
Vishay General Semiconductor
DF005MA thru DF10MA
0.1
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3