MJD122 ON Semiconductor, MJD122 Datasheet - Page 4

• Manufacturer Part Number: MJD122
• Description: Darlington Transistors 8A 100V Bipolar
• Manufacturer: ON Semiconductor

Specifications of MJD122

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3 (DPAK)
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 10 uA
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 100, 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10,000
5000
3000
2000
1000
10
500
300
200
100
10
10
10
10
10
10
+ 5
+ 4
+ 3
+ 2
+ 1
- 1
- 2
- 3
- 4
- 5
50
30
20
10
-1
+ 0.6
0
5
4
3
2
1
0
0.1
1
PNP MJD127
q
q
+ 0.4
VB
*I
T
VC
REVERSE
C
J
for V
/I
2
100°C
= 150°C
Figure 7. Small−Signal Current Gain
B
for V
0.2
25°C
V
≤ h
+ 0.2
CE
BE
CE(sat)
V
FE/3
0.3
= 30 V
BE
PNP
NPN
5
I
25°C to 150°C
, BASE-EMITTER VOLTAGE (VOLTS)
C
T
V
I
, COLLECTOR CURRENT (AMP)
C
0
C
CE
= 3 Adc
= 25°C
0.5
10
= 4 Vdc
f, FREQUENCY (kHz)
- 0.2 - 0.4 - 0.6
FORWARD
- 55°C to 25°C
20
25°C to 150°C
1
TYPICAL ELECTRICAL CHARACTERISTICS
50
2
100
- 0.8
- 55°C to 25°C
Figure 5. Temperature Coefficients
Figure 6. Collector Cut−Off Region
3
200
- 1
5
http://onsemi.com
- 1.2 - 1.4
500 1000
7
10
4
10
10
10
10
10
10
10
300
200
100
+ 5
+ 4
+ 3
+ 2
+ 1
- 1
- 2
- 3
- 4
- 5
70
50
30
-1
0
- 0.6
5
4
3
2
1
0
0.1
0.1
NPN MJD122
q
VB
- 0.4
*I
REVERSE
T
0.2
C
for V
J
100°C
/I
= 150°C
B
0.2
V
25°C
≤ h
CE
- 0.2
BE
V
FE/3
= 30 V
*q
0.3
BE
0.5
VC
I
, BASE-EMITTER VOLTAGE (VOLTS)
V
C
PNP
NPN
R
, COLLECTOR CURRENT (AMP)
Figure 8. Capacitance
for V
0
, REVERSE VOLTAGE (VOLTS)
25°C to 150°C
0.5
1
CE(sat)
+ 0.2 + 0.4 + 0.6
FORWARD
0.7
2
- 55°C to 25°C
1
C
5
ib
C
ob
- 55°C to 25°C
2
10
+ 0.8
25°C to 150°C
3
20
T
+ 1
J
= 25°C
5
+ 1.2 + 1.4
50
7
100
10