MMUN2133LT1 ON Semiconductor, MMUN2133LT1 Datasheet

MMUN2133LT1

Manufacturer Part Number

MMUN2133LT1

Description

Digital Transistors 100mA 50V BRT PNP

Manufacturer

ON Semiconductor

Datasheet

1.MMUN2115LT1.pdf (13 pages)

Specifications of MMUN2133LT1

Configuration

Single

Transistor Polarity

PNP

Typical Input Resistor

4.7 KOhms

Typical Resistor Ratio

0.1

Mounting Style

SMD/SMT

Package / Case

SOT-23-3

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

0.1 A

Peak Dc Collector Current

100 mA

Power Dissipation

246 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMUN2133LT1G

Manufacturer:

ON Semiconductor

Quantity:

34 607

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMUN2133LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMUN2133LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MMUN2133LT1G

Quantity:

5 000

Current page: 1 of 13
Download datasheet (191Kb)

MMUN2111LT1G Series

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

MAXIMUM RATINGS

August, 2009 − Rev. 10

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance,

Junction and Storage,

Temperature Range

This new series of digital transistors is designed to replace a single

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

Compliant

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SOT-23 package can be soldered using wave or reflow. The

Available in 8 mm embossed tape and reel.

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= 25°C

Characteristic

Junction-to-Ambient

Junction-to-Lead

Rating

= 25°C unless otherwise noted)

Symbol

CBO

CEO

, T

qJA

qJL

stg

246 (Note 1)

400 (Note 2)

508 (Note 1)

174 (Note 1)

208 (Note 2)

311 (Note 2)

−55 to +150

2.0 (Note 1)

3.2 (Note 2)

Value

Max

100

mW/°C

mAdc

°C/W

Unit

Vdc

°C

MMUN21xxLT1G

MMUN21xxLT3G

†For information on tape and reel specifications,

See specific marking information in the device marking table

on page 2 of this data sheet.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

PIN 1

BASE

(INPUT)

*Date Code orientation may vary depending

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

upon manufacturing location.

CASE 318

A6x

STYLE 6

SOT−23

ORDERING INFORMATION

http://onsemi.com

= Device Code

= A − L (Refer to page 2)

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

SOT−23

Publication Order Number:

10000/Tape & Reel

3000/Tape & Reel

MMUN2111LT1/D

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

MARKING

DIAGRAM

Shipping

A6x M G

†

Related parts for MMUN2133LT1

MMUN2133LT1 Summary of contents

Page 1

... Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor ...

Page 2

... A Symbol = CBO = CEO MMUN2111LT1G I EBO MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G = (BR)CBO V (BR)CEO http://onsemi.com 2 R2 (K) Shipping 10 3000/Tape & Reel 10,000/Tape & Reel 22 3000/Tape & Reel 47 3000/Tape & Reel 10,000/Tape & Reel 47 3000/Tape & Reel 10,000/Tape & ...

Page 3

... MMUN2133LT1G MMUN2130LT1G MMUN2131LT1G MMUN2115LT1G MMUN2116LT1G MMUN2132LT1G MMUN2134LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2113LT1G V MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2134LT1G MMUN2115LT1G MMUN2116LT1G MMUN2131LT1G MMUN2132LT1G MMUN2130LT1G http://onsemi.com 3 Min Typ Max 35 60 − 100 − 80 140 − 80 140 − ...

Page 4

... A Symbol MMUN2111LT1G R1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G R 1 MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G http://onsemi.com 4 Min Typ Max 7 15.4 22 28.6 32.9 47 61 3.3 4.7 6.1 0.7 1 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 250 200 150 100 R = 625°C/W qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve 1000 100 COLLECTOR CURRENT (mA) C Figure 3. DC ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat REVERSE ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat ...

Page 12

... V , REVERSE BIAS VOLTAGE (VOLTS) R Figure 39. Output Capacitance −25° 25°C 75°C 0 COLLECTOR CURRENT (mA) C Figure 41. Input Voltage versus Output Current MMUN2133LT1 1000 75°C 100 25° versus I C 100 75° MHz 25° 0 0.01 0.001 Figure 40. Output Current versus Input Voltage Typical Application ...

Page 13

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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