NSBC143TDXV6T5 ON Semiconductor, NSBC143TDXV6T5 Datasheet

NSBC143TDXV6T5

Manufacturer Part Number

NSBC143TDXV6T5

Description

Digital Transistors 100mA 50V Dual NPN

Manufacturer

ON Semiconductor

Datasheet

1.NSBC114YDXV6T5.pdf (9 pages)

Specifications of NSBC143TDXV6T5

Configuration

Dual

Transistor Polarity

NPN

Typical Input Resistor

4.7 KOhms

Mounting Style

SMD/SMT

Package / Case

SOT-563-6

Collector- Emitter Voltage Vceo Max

50 V

Continuous Collector Current

0.1 A

Peak Dc Collector Current

100 mA

Power Dissipation

357 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NSBC114EDXV6T1,

NSBC114EDXV6T5

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low power surface mount applications where board space is at

a premium.

Features

•

1. FR−4 @ Minimum Pad

MAXIMUM RATINGS

May, 2006 − Rev. 6

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation; T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Total Device Dissipation; T

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Junction and Storage Temperature

Range

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Lead−Free Solder Plating

These are Pb−Free Devices

= 25°C unless otherwise noted, common for Q

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

= 25°C

Preferred Devices

Symbol

CBO

CEO

, T

qJA

stg

and Q

357 (Note 1)

350 (Note 1)

500 (Note 1)

250 (Note 1)

2.9 (Note 1)

4.0 (Note 1)

−55 to +150

Value

Max

100

)

mW/°C

mAdc

°C/W

Unit

Vdc

°C

NSBC1xxxDXV6T1

NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel

NSBC1xxxDXV6T5

NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel

†For information on tape and reel specifications,

*This package is inherently Pb−Free.

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

xx = Device Code (Refer to Page 2)

M = Date Code

DEVICE MARKING INFORMATION

Device

= Pb−Free Package

ORDERING INFORMATION

(4)

(3)

http://onsemi.com

NSBC114EDXV6T1

CASE 463A

SOT−563

PLASTIC

SOT−563* 4000/Tape & Reel

SOT−563* 8000/Tape & Reel

Package

(5)

Publication Order Number:

(2)

NSBC114EDXV6/D

MARKING

DIAGRAM

Shipping

(1)

(6)

xx M G

†

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NSBC143TDXV6T5 Summary of contents

Page 1

... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT− ...

Page 2

NSBC114EDXV6T1, NSBC114EDXV6T5 DEVICE MARKING, ORDERING, AND RESISTOR VALUES Device† NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 (Note 2) NSBC143TDXV6T1 (Notes 2) NSBC113EDXV6T1 (Note 2) NSBC123EDXV6T1 (Notes 2) NSBC143EDXV6T1 (Notes 2) NSBC143ZDXV6T1 (Notes 2) NSBC124XDXV6T1 (Notes 2) NSBC123JDXV6T1 (Note 2) NSBC115EDXV6T1 (Notes 2) ...

Page 3

NSBC114EDXV6T1, NSBC114EDXV6T5 ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain ( 5.0 mA Collector-Emitter Saturation Voltage ( mA 0.3 mA mA, I ...

Page 4

NSBC114EDXV6T1, NSBC114EDXV6T5 300 250 200 150 100 R = 833°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 4 100 150 ...

Page 5

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 8

NSBC114EDXV6T1, NSBC114EDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 9

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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