FZ1200R17KF6C-B2 Infineon Technologies

FZ1200R17KF6C-B2

Manufacturer Part Number

FZ1200R17KF6C-B2

Description

IGBT Modules 1700V 1200A SINGLE

Manufacturer

Infineon Technologies

Specifications of FZ1200R17KF6C-B2

Configuration

Dual Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

1700 V

Collector-emitter Saturation Voltage

2.6 V

Continuous Collector Current At 25 C

1950 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

9.6 KW

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

IHM

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ1200R17KF6C-B2

Manufacturer:

INFINEON

Quantity:

120

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