BSM100GT120DN2 Infineon Technologies

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BSM100GT120DN2

Manufacturer Part Number
BSM100GT120DN2
Description
IGBT Modules 1200V 100A TRIPACK
Manufacturer
Infineon Technologies

Specifications of BSM100GT120DN2

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
150 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
680 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
EconoPACK 3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM100GT120DN2
Quantity:
10 000

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