BSM150GT120DN2 Infineon Technologies, BSM150GT120DN2 Datasheet

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BSM150GT120DN2

Manufacturer Part Number
BSM150GT120DN2
Description
IGBT Modules 1200V 150A TRIPACK
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM150GT120DN2

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
200 A
Gate-emitter Leakage Current
320 nA
Power Dissipation
1.25 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
EconoPACK 3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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IGBT Power Module
Preliminary data
Semiconductor Group
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 150 GT 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 200A
CE
I
C
1
Package
TRIPACK
Symbol
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
C
Cpuls
j
stg
CE
CGR
GE
tot
is
thJC
thJCD
BSM 150 GT 120 DN2
55 / 150 / 56
-55 ... + 150
Values
Ordering Code
C67070-A2518-A67
+ 150
± 20
1200
1200
1250
2500
200
150
400
300
F
0.12
0.28
20
11
Aug-23-1996
Unit
V
A
W
°C
K/W
Vac
mm
-

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BSM150GT120DN2 Summary of contents

Page 1

IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 150 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 150 ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 5.6 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 1300 W 1100 P tot 1000 900 800 700 600 500 400 300 200 100 Collector current ...

Page 5

Typ. output characteristics parameter µ ° 300 A 260 17V 15V 240 I 13V C 11V 220 9V 7V 200 180 160 140 120 100 ...

Page 6

Typ. gate charge Gate parameter 150 A C puls 600 200 400 600 Reverse biased safe operating ...

Page 7

Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 300 A 260 240 I F 220 200 180 T =125°C 160 j 140 120 100 0.0 0.5 1.0 ...

Page 9

Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group BSM 150 GT 120 DN2 9 Aug-23-1996 ...

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