FZ2400R12KE3 Infineon Technologies

FZ2400R12KE3

Manufacturer Part Number

FZ2400R12KE3

Description

IGBT Transistors 1200V 2400A SINGLE

Manufacturer

Infineon Technologies

Specifications of FZ2400R12KE3

Configuration

Dual Common Emitter Common Gate

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

1.7 V

Maximum Gate Emitter Voltage

+/- 20 V

Continuous Collector Current At 25 C

2400 A

Gate-emitter Leakage Current

400 nA

Power Dissipation

10 KW

Maximum Operating Temperature

+ 125 C

Package / Case

IHM 130X140-7

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Ic (max)

2,400.0 A

Vce(sat) (typ)

1.7 V

Technology

IGBT3

Housing

IHM 130 mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

FZ2400R12KE3

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FZ2400R12KE3_B9

Manufacturer:

EUPEC/Infineon

Quantity:

1 000

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