MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 2
![IGBT Transistors 15A 350V Ignition](/photos/26/98/269844/to220_sml.jpg)
MGP15N35CL
Manufacturer Part Number
MGP15N35CL
Description
IGBT Transistors 15A 350V Ignition
Manufacturer
ON Semiconductor
Datasheet
1.MGP15N35CL.pdf
(10 pages)
Specifications of MGP15N35CL
Configuration
Single
Collector- Emitter Voltage Vceo Max
380 V
Collector-emitter Saturation Voltage
10 V
Maximum Gate Emitter Voltage
22 V
Gate-emitter Leakage Current
150 W
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-220-3
Continuous Collector Current Ic Max
15 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Collector Current (dc) (max)
15A
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
360V
Power Dissipation Pd
150W
Collector Emitter Voltage V(br)ceo
360V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MGP15N35CL
Manufacturer:
ON
Quantity:
12 500
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
Gate Threshold Voltage
Threshold Temperature Coefficient
(Negative)
Characteristic
(Note 2)
Characteristic
B
Symbol
BV
BV
V
VCES(R)
I
I
I
R
GE(th)
CES
ECS
GES
R
−
CES
GES
GE
G
http://onsemi.com
TO−220
D
Test Conditions
2
PAK (Note 1)
V
V
I
I
2
I
I
V
I
C
C
V
C
G
CE
V
C
CE
GE
GE
GE
= −75 mA
= 1.0 mA,
= 2.0 mA
= 5.0 mA
= 10 mA
= 300 V,
= −24 V
= 10 V
−
−
= V
−
= 0 V
CE
Temperature
T
T
T
T
T
T
Symbol
T
T
T
T
T
T
T
T
J
J
J
J
J
J
T
T
T
T
R
R
R
J
J
J
J
J
J
J
J
= −40°C to
= −40°C to
= −40°C to
= −40°C to
= −40°C to
= −40°C to
J
J
J
J
T
150°C
150°C
150°C
150°C
150°C
150°C
θJC
θJA
θJA
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
L
= 25°C
= 25°C
= 25°C
= 25°C
−
0.75
Min
320
330
384
1.4
1.6
25
25
25
17
10
−
−
−
−
−
−
−
−
Value
62.5
275
1.0
50
0.35
0.05
Typ
350
360
600
1.5
0.7
8.0
1.7
1.1
1.9
4.4
10
33
36
30
20
70
16
1000
Max
2.1*
380
380
40*
1.5
1.0
15*
0.5
2.0
1.4
20
50
50
50
22
26
−
−
°C/W
Unit
°C
mV/°C
μA
μA
Unit
V
V
V
V
mA
kΩ
Ω
DC
DC
DC
DC
DC
DC