MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 6
![IGBT Transistors 15A 350V Ignition](/photos/26/98/269844/to220_sml.jpg)
MGP15N35CL
Manufacturer Part Number
MGP15N35CL
Description
IGBT Transistors 15A 350V Ignition
Manufacturer
ON Semiconductor
Datasheet
1.MGP15N35CL.pdf
(10 pages)
Specifications of MGP15N35CL
Configuration
Single
Collector- Emitter Voltage Vceo Max
380 V
Collector-emitter Saturation Voltage
10 V
Maximum Gate Emitter Voltage
22 V
Gate-emitter Leakage Current
150 W
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-220-3
Continuous Collector Current Ic Max
15 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Collector Current (dc) (max)
15A
Package Type
TO-220AB
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
360V
Power Dissipation Pd
150W
Collector Emitter Voltage V(br)ceo
360V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MGP15N35CL
Manufacturer:
ON
Quantity:
12 500
0.01
14
12
10
0.1
0.00001
10
8
6
4
2
0
250
1
Figure 13. Switching Speed vs. External Gate
Single Pulse
Duty Cycle = 0.5
0.05
0.01
0.02
0.2
0.1
R
G
, EXTERNAL GATE RESISTANCE (Ω)
0.0001
500
Resistance
t
d(off)
t
f
(Non−normalized Junction−to−Ambient mounted on
0.001
Figure 15. Transient Thermal Resistance
750
V
V
T
I
L = 300 μH
C
J
CC
GE
= 10 A
= 25°C
= 300 V
= 5.0 V
0.01
fixture in Figure 16)
http://onsemi.com
1000
P
t,TIME (S)
DUTY CYCLE, D = t
(pk)
6
0.1
14
12
10
8
6
4
2
0
250
t
1
t
2
Figure 14. Switching Speed vs. External Gate
V
V
T
I
L = 300 μH
C
CC
GE
J
= 10 A
= 150°C
= 300 V
= 5.0 V
R
1
G
1
/t
, EXTERNAL GATE RESISTANCE (Ω)
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
T
R
500
J(pk)
θJC
≅ R(t) for t ≤ 0.2 s
Resistance
− T
10
A
t
d(off)
= P
t
f
(pk)
1
R
θJA
750
(t)
100
1000
1000