MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 7

• Manufacturer Part Number: MGP15N35CL
• Description: IGBT Transistors 15A 350V Ignition
• Manufacturer: ON Semiconductor

Specifications of MGP15N35CL

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 380 V
• Collector-emitter Saturation Voltage: 10 V
• Maximum Gate Emitter Voltage: 22 V
• Gate-emitter Leakage Current: 150 W
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 360V
• Power Dissipation Pd: 150W
• Collector Emitter Voltage V(br)ceo: 360V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MGP15N35CL, MGB15N35CL
1.5″
4″
4″
0.125″
4″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
100
100
DC
DC
100 μs
10
10
100 μs
1 ms
10 ms
1
1
1 ms
100 ms
10 ms
100 ms
0.1
0.1
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Single Pulse Safe Operating Area
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at T
= 255C)
(Mounted on an Infinite Heatsink at T
= 1255C)
C
C
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