CY14B256LA-SP45XI Cypress Semiconductor Corp, CY14B256LA-SP45XI Datasheet - Page 12
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CY14B256LA-SP45XI
Manufacturer Part Number
CY14B256LA-SP45XI
Description
CY14B256LA-SP45XI
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Specifications of CY14B256LA-SP45XI
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
52mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256LA-SP45XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY14B256LA-SP45XIT
Manufacturer:
CYRPESS
Quantity:
20 000
Note
Document Number: 001-54707 Rev. *F
17. WE must be HIGH during SRAM read cycles.
18. HSB must remain HIGH during READ and WRITE cycles.
19. If WE is low when CE goes low, the outputs remain in the high impedance state.
20. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Data Output
Data Input
Address
Address
WE
CE
CE
OE
I
IH
CC
WE
CE
during address transitions.
High Impedance
Figure 6. SRAM Read Cycle #2: CE and OE Controlled
Standby
Figure 7. SRAM Write Cycle #1: WE Controlled
Figure 8. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
t
SA
PU
t
LZCE
t
LZOE
t
Address Valid
AA
High Impedance
t
t
ACE
AW
t
Address Valid
t
PWE
t
SCE
HZWE
Address Valid
t
t
SCE
DOE
t
t
PWE
RC
t
Active
WC
Input Data Valid
t
WC
t
SD
t
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[18, 19, 20]
[18, 19, 20]
t
t
HD
HD
t
HA
t
HA
[17, 18]
t
t
HZCE
HZOE
t
PD
CY14B256LA
Page 12 of 22
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