CY14B256LA-SP45XI Cypress Semiconductor Corp, CY14B256LA-SP45XI Datasheet - Page 7
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CY14B256LA-SP45XI
Manufacturer Part Number
CY14B256LA-SP45XI
Description
CY14B256LA-SP45XI
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Specifications of CY14B256LA-SP45XI
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
52mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B256LA-SP45XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY14B256LA-SP45XIT
Manufacturer:
CYRPESS
Quantity:
20 000
Table 2. Mode Selection (continued)
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
The AutoStore is reenabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the Software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
Document Number: 001-54707 Rev. *F
1. Read address 0x0E38 valid READ
2. Read address 0x31C7 valid READ
3. Read address 0x03E0 valid READ
4. Read address 0x3C1F valid READ
5. Read address 0x303F valid READ
6. Read address 0x0B45 AutoStore disable
1. Read address 0x0E38 valid READ
2. Read address 0x31C7 valid READ
3. Read address 0x03E0 valid READ
4. Read address 0x3C1F valid READ
5. Read address 0x303F valid READ
6. Read address 0x0B46 AutoStore enable
CE
L
L
L
WE
H
H
H
OE
L
L
L
A
0x3C1F
0x3C1F
0x0FC0
0x3C1F
0x0E38
0x31C7
0x03E0
0x303F
0x0B46
0x0E38
0x31C7
0x03E0
0x303F
0x0E38
0x31C7
0x03E0
0x303F
0x0C63
14
- A
If the AutoStore function is disabled or reenabled, a manual
STORE operation (Hardware or Software) must be issued to
save the AutoStore state through subsequent power-down
cycles. The part comes from the factory with AutoStore enabled.
Data Protection
The CY14B256LA protects data from corruption during low
voltage conditions by inhibiting all externally initiated STORE
and write operations. The low voltage condition is detected when
V
(both CE and WE are LOW) at power-up, after a RECALL or
STORE, the write is inhibited until the SRAM is enabled after
t
writes during power-up or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
LZHSB
0
CC
[6]
is less than V
(HSB to output active). This protects against inadvertent
AutoStore Enable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Nonvolatile
STORE
Recall
Mode
SWITCH
. If the CY14B256LA is in a write mode
Output high-Z
Output high-Z
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
Output data
I/O
CY14B256LA
Active I
Active
Active
Page 7 of 22
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CC2
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