DG612DY-T1-E3 Vishay, DG612DY-T1-E3 Datasheet - Page 6
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DG612DY-T1-E3
Manufacturer Part Number
DG612DY-T1-E3
Description
HI SPEED DCMOS ANLG. SW.
Manufacturer
Vishay
Datasheet
1.DG611DY-T1-E3.pdf
(10 pages)
Specifications of DG612DY-T1-E3
Function
Switch
Circuit
4 x SPST - NO
On-state Resistance
45 Ohm
Voltage Supply Source
Single, Dual Supply
Voltage - Supply, Single/dual (±)
10 V ~ 18 V, ±10 V ~ 15 V
Current - Supply
-1µA, 1µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG612DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DG612DY-T1-E3
Manufacturer:
Vishay
Quantity:
4 217
Part Number:
DG612DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
DG611, DG612, DG613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
6
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
400
350
300
250
200
150
100
50
6
5
4
3
2
1
0
0
- 4
0
- 55
V+ = 15 V
V- = - 3 V
V+ = 15 V
V- = - 3 V
I
S
= - 1 mA
- 2
Leakage Currents vs. Temperature
Input Switching Threshold vs. V
- 25
R
125 °C
DS(on)
V
0
L
- Logic Supply Voltage (V)
0
V
5
vs. V
D
Temperature (°C)
2
- Drain Voltage (V)
25
D
I
D(on)
and Temperature
4
25 °C
50
6
I
10
S(of f),
75
- 55 °C
8
I
D(of f)
100
L
1 0
125
15
12
- 12
- 16
- 20
- 24
- 10
- 20
24
22
20
18
16
14
12
10
- 4
- 8
20
10
8
6
4
2
0
0
0
- 55
- 3 - 2 - 1
1
- 3 dB Bandwidth/Insertion Loss vs. Frequency
V+ = 15 V
V- = - 3 V
- 35
Switching Times vs. Temperature
Charge Injection vs. Analog Voltage
- 15
0
V
ANALO G
t
1
OFF
1 0
5
f - Frequency (MHz)
Temperature (°C)
2
t
Qd
ON
- Analog Voltage (V)
25
3
Qs
S11-0154-Rev. I, 31-Jan-11
- 3 dB Point
Document Number: 70057
4
45
5
100
V+ = 15 V
V- = - 3 V
R
C
65
L
L
6
R
= 300
= 10 pF
L
85
= 50
7
8
105
9
1000
125
1 0