BAS56,235 NXP Semiconductors, BAS56,235 Datasheet - Page 4
![DIODE DUAL SW 120V 200MA SOT143](/photos/5/30/53004/568-sot-143b_sml.jpg)
BAS56,235
Manufacturer Part Number
BAS56,235
Description
DIODE DUAL SW 120V 200MA SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BAS56215.pdf
(12 pages)
Specifications of BAS56,235
Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 120V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
60V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933742310235
BAS56 /T3
BAS56 /T3
BAS56 /T3
BAS56 /T3
NXP Semiconductors
7. Characteristics
BAS56
Product data sheet
Table 7.
T
[1]
[2]
[3]
[4]
[5]
Symbol
V
I
C
t
V
R
rr
j
F
FR
d
= 25
T
Series connection.
When switched from I
When switched from I
When switched from I
amb
°
C unless otherwise specified.
= 25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Characteristics
All information provided in this document is subject to legal disclaimers.
F
F
F
= 400 mA to I
= 400 mA; t
= 400 mA; t
Rev. 3 — 29 June 2010
r
r
= 30 ns.
= 100 ns.
R
I
f = 1 MHz; V
Conditions
V
V
V
V
F
= 400 mA; R
R
R
R
R
= 200 mA
= 60 V
= 60 V; T
= 120 V
= 120 V; T
L
j
R
= 100 Ω; measured at I
= 150 °C
j
= 0 V
= 150 °C
[1]
[2]
[2]
[3]
[4]
[5]
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
R
= 40 mA.
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS56
Max
1
100
100
100
100
2.5
6
2
1.5
Unit
V
nA
μA
nA
μA
pF
ns
V
V
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