M1MA142WKT1G ON Semiconductor, M1MA142WKT1G Datasheet - Page 2
![DIODE SW DUAL SS CC 80V SOT-323](/photos/5/30/53065/sc___70_sot___323__419___04_sml.jpg)
M1MA142WKT1G
Manufacturer Part Number
M1MA142WKT1G
Description
DIODE SW DUAL SS CC 80V SOT-323
Manufacturer
ON Semiconductor
Datasheet
1.M1MA142WKT1G.pdf
(4 pages)
Specifications of M1MA142WKT1G
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 75V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
3ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
0.15 A
Max Surge Current
0.75 A
Configuration
Dual Common Cathode
Recovery Time
3 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M1MA142WKT1G
M1MA142WKT1GOSTR
M1MA142WKT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M1MA142WKT1G
Manufacturer:
ON Semiconductor
Quantity:
51
Company:
Part Number:
M1MA142WKT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
M1MA142WKT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
rr
Test Circuit
Characteristic
(T
M1MA141WKT1
M1MA142WKT1
M1MA141WKT1
M1MA142WKT1
A
= 25C)
http://onsemi.com
I
R
F
V
L
= 10 mA, V
R
= 100 Ω, I
= 0, f = 1.0 MHz
I
2
I
F
Condition
R
V
V
= 100 mA
R
R
= 100 mA
= 35 V
= 75 V
rr
R
= 0.1 I
= 6.0 V,
R
Symbol
(Note 2)
V
C
V
I
t
R
rr
F
R
D
Min
40
80
--
--
--
--
Max
0.1
1.2
2.0
3.0
--
mAdc
Unit
Vdc
Vdc
pF
ns