BAW56E6327 Infineon Technologies, BAW56E6327 Datasheet
BAW56E6327
Manufacturer Part Number
BAW56E6327
Description
DIODE SWITCHING 80V SOT-23
Manufacturer
Infineon Technologies
Specifications of BAW56E6327
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
150nA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAW56E6327XT
BAW56INTR
BAW56XTINTR
BAW56XTINTR
SP000014929
BAW56INTR
BAW56XTINTR
BAW56XTINTR
SP000014929
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAW56E6327
Manufacturer:
INFINEON
Quantity:
1 500
Company:
Part Number:
BAW56E6327
Manufacturer:
INF
Quantity:
5 392
Silicon Switching Diode Array
Type
BAW56
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
For high-speed switching applications
Common anode
thJA
please refer to Application Note Thermal Resistance
Marking
A1s
1)
S
= 31 °C
s
1 = C1
1
Pin Configuration
1
2 = C2
3
Symbol
V
V
I
I
P
T
T
R
F
FS
j
stg
R
RM
tot
thJS
EHA07006
2
3=A1/A2
-65 ... 150
3
Value
200
330
150
4.5
70
70
360
Package
SOT23
1
Jul-31-2001
BAW56
VPS05161
Unit
V
mA
A
mW
°C
K/W
2
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