C106D ON Semiconductor, C106D Datasheet - Page 2

SCRs 400V 4A

C106D

Manufacturer Part Number
C106D
Description
SCRs 400V 4A
Manufacturer
ON Semiconductor
Datasheet

Specifications of C106D

Breakover Current Ibo Max
20 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
2.2 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
6 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
3 mA
Mounting Style
Through Hole
Package / Case
TO-225-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C106D
Manufacturer:
MOT/ON
Quantity:
1 000
Part Number:
C106D
Manufacturer:
ON Semiconductor
Quantity:
1 200
Part Number:
C106D
Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
ST
0
Part Number:
C106D1
Quantity:
19
Part Number:
C106DG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Peak Repetitive Off−State Voltage (Note 1)
On-State RMS Current
Average On−State Current
Peak Non-Repetitive Surge Current
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
C106B
C106BG
C106D
C106DG
C106D1*
C106D1G*
C106M
C106MG
C106M1*
C106M1G*
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
(Sine Wave, 50−60 Hz, R
T
(180° Conduction Angles, T
(180° Conduction Angles, T
(1/2 Cycle, Sine Wave, 60 Hz, T
(Pulse Width v1.0 msec, T
(Pulse Width v1.0 msec, T
(Pulse Width v1.0 msec, T
DRM
C
= −40° to 110°C)
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
Device
(T
J
= 25°C unless otherwise noted)
GK
C
C
C
C
C
= 1 kW,
= 80°C)
= 80°C)
= 80°C)
= 80°C)
= 80°C)
J
Characteristic
= +110°C)
Characteristic
(T
C
= 25°C unless otherwise noted.)
http://onsemi.com
C106B
C106D, C106D1*
C106M, C106M1*
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
2
Symbol
R
R
T
qJC
qJA
L
Symbol
I
V
P
V
T(RMS)
I
I
P
T(AV)
I
T
DRM,
TSM
G(AV)
RRM
I
GM
T
GM
stg
2
J
t
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
Max
260
3.0
Shipping
75
−40 to +110
−40 to +150
Max
2.55
1.65
200
400
600
4.0
0.5
0.1
0.2
6.0
20
°C/W
°C/W
Unit
°C
in. lb.
Unit
A
°C
°C
W
W
V
A
A
A
A
2
s

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