C106D ON Semiconductor, C106D Datasheet - Page 4

• Manufacturer Part Number: C106D
• Description: SCRs 400V 4A
• Manufacturer: ON Semiconductor

Specifications of C106D

• Breakover Current Ibo Max: 20 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2.2 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 6 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 3 mA
• Mounting Style: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
110
0.7
1.0
0.9
0.8
0.6
0.5
0.4
0.3
0.2
90
80
70
60
50
40
30
20
10
10
1
-40 -25
-45 -25
0
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
Figure 3. Typical Gate Trigger Current versus
Figure 5. Typical Gate Trigger Voltage versus
.4
I
T(AV)
Figure 1. Average Current Derating
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
1.2
Junction Temperature
Junction Temperature
5
5
1.6
20
20
2.0
35
35
2.4
50
50
DC
2.8
65
65
3.2
80
80
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3.6
95
95
110
110
4.0
4
1000
1000
100
100
10
10
10
8
6
4
2
0
-40 -25
-40 -25
0
Figure 2. Maximum On−State Power Dissipation
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
.4
Figure 6. Typical Latching Current versus
Figure 4. Typical Holding Current versus
I
T(AV)
-10
-10
.8
AVERAGE ON‐STATE CURRENT (AMPERES)
T
T
J
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
, JUNCTION TEMPERATURE (°C)
Junction Temperature
1.2
5
5
1.6
20
20
JUNCTION TEMPERATURE ≈ 110°C
2.0
35
35
2.4
50
50
2.6
65
65
3.2
80
80
DC
3.6
95
95
110
110
4.0