BFG67 T/R NXP Semiconductors, BFG67 T/R Datasheet - Page 10

• Manufacturer Part Number: BFG67 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG67 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG67,215

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistors
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 15 mA.
= 15 mA.
Fig.18 Common emitter reverse transmission coefficient (S
180
j
j
Fig.19 Common emitter output reflection coefficient (S
0
0.2
0.2
150
0.5
150
0.4
0.5
0.5
0.2
0.3
120
120
Rev. 05 - 23 November 2007
0.2
0.5
0.1
3 GHz
90
90
1
1
1
40 MHz
2
3 GHz
BFG67; BFG67/X; BFG67/XR
60
60
2
2
5
40 MHz
10
MBB312
MBB311
30
30
5
5
22
10
10
0
).
12
).
Product specification
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